Laser-based tools have become increasingly visible within R&D labs, pilot production lines, and as the preferred technology used by many turnkey suppliers. As equipment types however, relatively little is known about the differences in the laser-based tools used for solar applications within each of the c-Si and thin-film segments. This paper explains the key components of a laser-based tool, and how they are adapting to meet the demands from next-generation production line equipment required by the solar industry.
Laser-based tools have become increasingly visible within R&D labs, pilot production lines, and as the preferred technology used by many turnkey suppliers. As equipment types however, relatively little is known about the differences in the laser-based tools used for solar applications within each of the c-Si and thin-film segments. This paper explains the key components of a laser-based tool, and how they are adapting to meet the demands from next-generation production line equipment required by the solar industry.
Transparent conducting oxides (TCOs) are a special class of materials that can simultaneously be both optically transparent and electrically conducting and, as such, are a critical component in most thin-film photovoltaics. TCOs are generally based on a limited class of metal oxide semiconductors such In2O3, ZnO and SnO2, which are transparent due to their large band gap energy and can also tolerate very high electronic doping concentrations to yield conductivities of 1000S/cm or higher. However, these thee basic TCOs alone do not meet the TCO performance needs of emerging PV and other applications.
In recent years, a new generation of solar electric products has emerged from the lab into the global market: thin-film technologies that employ approximately 1% of the active, expensive photovoltaic material used by standard crystalline-silicon cells. Through a combination of cost advantages and new product applications, CdTe, a-Si and CIGS thin-film PV have the potential to foster a paradigm shift toward distributed electricity generation at cost parity with other forms of energy. But until recently, the photoactive compound has not had a reliable, rapid manufacturing process that could scale effectively to multi-megawatt-scale volume production and provide significant amounts of electricity at the point of use. This article describes a novel process, known as field-assisted simultaneous synthesis and transfer (FASST) printing, a manufacturing approach that enables the rapid printing of microscale CIGS films with p- and n-type nanodomains that are critical for achieving the highest efficiencies possible.
With the thin-film silicon industry facing the problems of high-quality material deposition at high rates and narrowing deposition process windows, the “no-drift regime” is an important part of this development. In the case of the plasma-enhanced chemical vapor deposition (PECVD) of thin silicon films, the inconstancy of the concentration of silicon-containing particles (SCP) in the plasma leads to changes in deposition conditions, causing a deterioration of film properties, and, therefore, decreasing the performance of the solar cells. During the last few decades, evidence about the process instabilities has been accumulated in different laboratories. In this study, Fourier transform infrared absorption spectroscopy (FTIR), optical emission spectroscopy (OES), self-bias voltage and plasma impedance controls were applied as in-situ process diagnostics during the deposition of amorphous and microcrystalline silicon thin-films. Results of the study were then discussed.
Although the entire solar manufacturing industry, from raw materials to finished modules, has enjoyed strong double-digit growth rates over the past several years, few sectors have soared like the amorphous-silicon thin-film photovoltaic equipment space. Much of this prodigious multibillion-dollar booking activity can be attributed to the acceptance of the turnkey production packages offered by the likes of Applied Materials, Oerlikon and Ulvac. These suppliers’ plug-and-play, standard toolset solutions are attractive to companies seeking to get into the TFPV module business on a fast track and then scale up their capacities in multimegawatt chunks to achieve grid-competitive cost-per-manufactured-watt metrics.
Thin-film silicon solar cells are a potentially low-cost alternative to solar cells based on bulk silicon that are commonly used in the industry at the present time. However, a major drawback of the current epitaxial semi-industrial screen-printed cells is that they only achieve an efficiency of about 11-12%. By upgrading their efficiency, this kind of solar cell would become more attractive to the photovoltaic industry. The optimization of the front surface texture by dry texturing based on a fluorine plasma and the introduction of an intermediate porous silicon reflector at the epi/substrate interface (multiple Bragg reflector) has proven to result in an efficiency boost up to about 14%.
The next two years will be crucial in determining the market viability and future of what many see as the most promising thin-film photovoltaics technology: copper indium gallium (di)selenide (CIGS) and its gallium-free cousin, CIS. With potential conversion efficiencies just below that of crystalline silicon PV, low-cost manufacturing strategies offering a chance to reach sub-dollar-per-watt manufacturing costs on both glass and flexible modules, and applications ranging from utility- and industrial-scale farms to building-integrated commercial and residential uses, the quaternary compound has a large grid-parity upside - if the very real challenges of scaling production to commercial volume can be met.
The rapidly-growing photovoltaic market has placed a strong demand on manufacturers to decrease solar cell production costs. For thin-film solar cells, this can be achieved by increasing substrate sizes to achieve a better productivity and by adding more advanced layer stack systems to enhance the solar cell’s efficiency. Nearly all required layers of the prominent thin-film-based solar cell types (a-Si/µc-Si, CdTe and CI(G)S) can be deposited by using plasma processes. On the one hand, plasma-enhanced chemical vapor deposition (PECVD) is used for the deposition of a-Si and µc-Si layers. On the other hand, magnetron sputtering is used for coating with transparent conductive oxides as ITO (indium tin oxide) and ZAO (aluminium-doped zinc oxide), metallic back contact layers such as Ti, Al and Mo, or components of the compound semiconductor layers such as Cu and In. Magnetron sputter processes use direct current (DC) or pulsed DC, whereas radio frequency (RF) power is used for PECVD processes. Of utmost importance to get a reliable, high-efficiency solar cell is a good uniformity of the deposited layers and the need for the layer to be defect-free. Defects such as particles and splashes are created inside the plasma when an unwanted local discharge - a so-called arc - occurs. This arc can be eliminated by switching off the power supply. The faster this is done, and the less energy that is delivered into the arc, the smaller and more insignificant the defect creation will be. For this reason, as well as for precise control of electrical power, advanced, fast-reacting arc management is very important to attain high-quality solar cell coatings.